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    GaN Product


    2" GaN Templates

    2 inch Gallium Nitride Templates


    2" GaN Templates
    Dimension :⌀ 50.8 ± 0.1 mm
    Thickness :4.5 ± 0.5 ㎛ / 20 ± 2 ㎛
    Orientation :C-plane (0001) ± 0.5

    Substrate

    Structure :

    		GaN on sapphire 


    Detail


    Dimension⌀ 50.8 ± 0.1 mm
    Thickness4.5 ± 0.5 ㎛, 20 ± 2 ㎛4.5 ± 0.5 ㎛
    Usable Surface Area> 90%
    OrientationC-Plane (0001)  ± 0.5º
    Conduction TypeN-type (Undoped)N-type(Si-doped)P-type (Mg-doped)
    Resistivity (300K)< 0.5 Ω·cm< 0.05 Ω·cm~ 10 Ω·cm
    Carrier Concentration< 5 x 10¹⁷ cmˉ³> 1 x 10¹⁸ cmˉ³> 6 x 10¹⁶ cmˉ³
    Mobility~ 300 cm² /V·s~ 200 cm² /V·s~ 10 cm² /V·s
    Dislocation DensityLess than 5 x 10⁸ cmˉ² (estimated by FWHMs of XRD)
    Substrate StructureGaN on sapphire (standard: SSP / option: DSP)
    PackagePackaged in a class 100 clean room environment, in cassette of 25pcs or single container, under a nitrogen atmosphere

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