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    GaN Product


    2" AlN Templates

    2 inch Aluminum Nitride Templates


    D-AlNTC-C50
    Conduction type :Semi-Insulating
    Polishing :One side Polishing

    		Double side Polishing
    Thickness :1, 2 μm

    		2, 3 μm

    		3, 4 μm

    		4, 5 μm


    Detail

    Specification


    ItemD-AlNTC-C50
    Dimension⌀ 50.8 ± 0.2 mm
    Thickness1-5 µm ± 10% /
    Thickness STD< 3%
    Orientation os AlNC-Plane (0001) off angle toward A-Axis  0.2 ± 0.1º
    Orientation Flat of AIN(1-100) 0 ± 0.2º, 16 ± 1 mm
    Conduction TypeSemi-Insulating
    XRD Crystal Quality1, 2 μm2, 3 μm3, 4 μm4, 5 μm
    (0002)FWHM(arcsec)≤ 80≤ 100≤ 120≤ 160
    (10-12)FWHM(arcsec)≤ 650≤ 550≤ 450≤ 400
    StructureAIN~ 1-5
    AIN buffer~ 20 nm
    sapphire430 ± 25 μm
    Edge Exclusion≤ 2.5 μm
    Through CrackNone
    Orientation of sapphireC-Plane (0001) off angle toward M-Axis  0.2 ± 0.1º
    Orientation Flat of sapphire(11-20) 0 ± 0.2º, 16 ± 1 mm
    Sapphire PolishSingle side polished(SSP) / Double side polished (DSP)
    PackagePackagesd in a cleanroom in containers

       * X-ray diffraction is measured witn 0.1mm slit.


    ItemS-1S-2A-1A-2BC
    Dimension⌀ 50.8 ± 1 mm
    Thickness350 ± 25 μm
    Dislocation Density< 9.9 x 10⁵ cmˉ²< 3 x 10⁶ cmˉ²< 9.9 x 10⁵ cmˉ²< 3 x 10⁶ cmˉ²< 3 x 10⁶ cmˉ²
    OrientationC-Plane (0001) off angle toward M-Axis  0.35 ± 0.15º (5 points)C-Plane (0001) off angle toward M-Axis  0.35 ± 0.15º (3 points*)
    Orientation Flat(1-100) ± 0.5º, 16.0 ± 1.0 mm
    Secondary Orientation Flat(11-20) ± 3º, 8.0 ± 1.0 mm
    TTV≤ 15 μm
    BOW≤ 20 μm≤ 40 μm
    Resistivity (300K)< 0.05 Ω·cm for N-type (Si-doped)
    Ga face surface roughness< 0.2nm (polished); or < 0.3nm (polished and surface treatment for epitaxy)
    N  face surface roughness0.5 ~1.5 μm   option: 1~3 nm (fine ground); < 0.2 nm (polished)
    PackagePackaged in a cleanroom in single wafer container
    Useable area**> 90%> 80%> 70%
    Macro defect density (hole)0 cm< 0.3 cmˉ²< 1 cmˉ²
    Max size of macro defects
    		< 700 μm< 2000 μm< 4000 μm

       * 3 points: the miscut angles of positions (2, 4, 5) are 0.35 ± 0.15°  (Refer to above drawing)

       ** Useable area: edge and macro defects exclusion


       - S-1, S-2 : Excellent level

       - A-1, A-2 : Production level

       - B : Research level

       - C : Dummy level

    {"google":["Roboto","Noto Sans"],"custom":["Noto Sans KR"]}
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    {"google":[],"custom":["Noto Sans KR"]}